Shockley Diode Calculator

Calculate current-voltage relationships in diodes using the Shockley diode equation

Calculate Diode Characteristics

1 = ideal diode, 1-2 = real diode

Reverse saturation current (temperature dependent)

V

~26 mV at room temperature (300K)

V

Voltage across the diode

Diode Characteristics

0.000e+0 A
Current
0.000e+0 mA
Near Zero Bias
Operating State
Resistance:N/A
Power:0.000e+0 W
Diode Type:Ideal
Temperature:~302K

Shockley Equation: I = Is(eVD/nVT - 1)

Parameters: n=1, Is=0.000e+0 A, VT=0.026V

Calculation: I = 0.000e+0 A × (e0/1×0.026 - 1)

Diode Analysis

✅ Ideal diode model (perfect diode behavior)

Example Calculation

Silicon Diode Forward Bias

Diode Type: Real silicon diode (n = 1.2)

Saturation Current: 1 nA (typical at room temperature)

Thermal Voltage: 26 mV (at 300K/27°C)

Applied Voltage: 0.7V (forward bias)

Calculation

I = Is(eVD/nVT - 1)

I = 1×10⁻⁹ × (e0.7/(1.2×0.026) - 1)

I = 1×10⁻⁹ × (e22.44 - 1)

I ≈ 5.2 mA

This shows the exponential current increase in forward bias

Diode Parameters

Emission Coefficient (n)

1 = Ideal diode

1-2 = Real diode

Accounts for manufacturing imperfections

Saturation Current (Is)

Temperature dependent

Typically nA to pA range

Reverse leakage current

Thermal Voltage (VT)

VT = kT/q

~26 mV at 300K

Proportional to absolute temperature

Bias Conditions

Forward: VD > 0

Reverse: VD < 0

Silicon conducts at ~0.7V forward

Common Diode Types

Silicon (Si):0.7V forward
Germanium (Ge):0.3V forward
Schottky:0.2-0.4V forward
LED (Red):1.8-2.2V forward
LED (Blue):3.0-3.5V forward

Diode Tips

Current increases exponentially with forward voltage

Temperature affects saturation current significantly

Reverse bias current is approximately -Is

Use current limiting resistors to prevent damage

Ideal diode model (n=1) is sufficient for most applications

Understanding the Shockley Diode Equation

What is the Shockley Equation?

The Shockley diode equation describes the current-voltage relationship in p-n junction diodes. It models both ideal and real diode behavior by accounting for the exponential relationship between forward voltage and current.

Key Physics Principles

  • Exponential current increase in forward bias
  • Temperature dependence through thermal voltage
  • Emission coefficient accounts for real device effects
  • Saturation current represents reverse leakage

Shockley Diode Equation

I = Is(eVD/nVT - 1)

Current vs. voltage relationship

Parameter Definitions

I: Diode current (A)
Is: Saturation current (A)
VD: Voltage across diode (V)
n: Emission coefficient (1-2)
VT: Thermal voltage = kT/q (V)

Note: At room temperature (300K), thermal voltage VT ≈ 26 mV. The equation becomes highly nonlinear for forward voltages above a few tenths of a volt.

Applications & Use Cases

Circuit Analysis

Calculate operating points and I-V characteristics of diode circuits

Device Modeling

Model real diode behavior for accurate circuit simulation

Temperature Analysis

Analyze temperature effects on diode performance